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Wolfspeed, Inc. is an American developer and manufacturer of wide-bandgap semiconductors, focused on silicon carbide and gallium nitride materials and devices for power and radio frequency applications such as transportation, power supplies, power inverters, and wireless systems. The company was formerly named Cree, Inc. [1]
Pure silicon carbide can be made by the Lely process, [20] in which SiC powder is sublimed into high-temperature species of silicon, carbon, silicon dicarbide (SiC 2), and disilicon carbide (Si 2 C) in an argon gas ambient at 2,500 °C and redeposited into flake-like single crystals, [21] sized up to 2 × 2 cm, at a slightly colder substrate ...
Silicon carbide (SiC) ceramic matrix composites (CMCs) are a specific application of engineering ceramic materials used to enhance aerospace applications such as turbine engine components and thermal protection systems. Due to exhibiting high temperature capabilities, low density, and resistance to oxidation and corrosion, SiC/SiC CMCs are ...
The Union Carbide and Carbon Corporation was formed on November 1, 1917, from the merger of the Union Carbide Company founded in 1898, the National Carbon Company founded in 1886, Linde Air Products Company, a maker of liquid oxygen at Buffalo confiscated from Gesellschaft für Linde's Eismaschinen AG under the Trading with the Enemy Act of 1917, and the Prest-O-Lite company, manufacturer of ...
Boron carbide, B 4 C, on the other hand, has an unusual structure which includes icosahedral boron units linked by carbon atoms. In this respect boron carbide is similar to the boron rich borides. Both silicon carbide (also known as carborundum) and boron carbide are very hard materials and refractory. Both materials are important industrially.
Silicon carbide. Pure silicon carbide is one of the most corrosion-resistant materials. Only strong bases, oxygen above about 800 °C (1,470 °F), and molten metals react with it to form carbides and silicides. The reaction with oxygen forms SiO 2 and CO 2, whereby a surface layer of SiO 2 slows down subsequent oxidation (passive oxidation).
AlSiC-10, containing 45 vol.% of A 356.2 aluminium alloy and 55 vol.% silicon carbide. Its thermal conductivity is 190–200 W/m K. Its thermal expansion roughly matches e.g. printed circuit boards, FR-4, and Duroid. Its density at 25 °C is 2.96 g/cm 3. AlSiC-12, containing 63 vol.% of A 356.2 aluminium alloy and 37 vol.% silicon carbide. Its ...
Titanium silicon carbide, chemical formula Ti 3 SiC 2, is a material with both metallic and ceramic properties. [ 1 ] [ 2 ] It is one of the MAX phases . See also