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Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as boron and antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
Incidence of the use of performance-enhancing drugs ("doping") in football seems to be lower than in other sports. However, this could also be explained by the low amount of unannounced drug testing during training. There were also no further investigations or consequences in the Operación Puerto doping case or other revelations. [1]
Semiconductor doping with boron, phosphorus, or arsenic is a common application of ion implantation. When implanted in a semiconductor, each dopant atom can create a charge carrier in the semiconductor after annealing. A hole can be created for a p-type dopant, and an electron for an n-type dopant. This modifies the conductivity of the ...
Critics argue that the NFL's policy on performance-enhancing drugs, set by the NFL and by the players' union (National Football League Players Association) instead of an independent agency like USADA, bans a specific list of stimulants rather than a "catchall" approach like the World Anti-Doping Agency, and uses random testing instead of the ...
In cycling, mechanical doping is the use of a secret motor to propel the bicycle. It is banned by the Union Cycliste Internationale. One of the first allegations of mechanical doping was in the 2010 Tour of Flanders. The first, and so far only, confirmed use of mechanical doping was at the 2016 UCI Cyclo-cross World Championships. Bike ...
However, these impurities introduce new energy levels in the band gap affecting the band structure which may alter the electronic properties of the semiconductor to a great extent. Having a shallow donor level means that these additional energy levels are not more than 3 k b T {\displaystyle 3k_{b}T} (0.075 eV at room temperature) away from the ...
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In the case of doping silicon with boron to create a P-type semiconductor material, a thin wafer of silicon is placed in a containment chamber and is immersed in boron gas. A pulsed laser is directed at the silicon wafer and this results in localised melting and subsequent recrystallisation of the silicon wafer material, allowing boron atoms in ...