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  2. RF CMOS - Wikipedia

    en.wikipedia.org/wiki/RF_CMOS

    RF CMOS is a metal–oxide–semiconductor (MOS) ... Abidi, along with UCLA colleagues J. Chang and Michael Gaitan, demonstrated the first RF CMOS amplifier in 1993.

  3. LDMOS - Wikipedia

    en.wikipedia.org/wiki/LDMOS

    The silicon-based RF LDMOS (radio-frequency LDMOS) is the most widely used RF power amplifier in mobile networks, [2] [3] [4] enabling the majority of the world's cellular voice and data traffic. [5] LDMOS devices are widely used in RF power amplifiers for base-stations as the requirement is for high output power with a corresponding drain to ...

  4. RF power amplifier - Wikipedia

    en.wikipedia.org/wiki/RF_power_amplifier

    A radio-frequency power amplifier (RF power amplifier) is a type of electronic amplifier that converts a low-power radio-frequency (RF) signal into a higher-power signal. [1] Typically, RF power amplifiers are used in the final stage of a radio transmitter , their output driving the antenna .

  5. Mixed-signal integrated circuit - Wikipedia

    en.wikipedia.org/wiki/Mixed-signal_integrated...

    The baseband processors [28] [29] and radio transceivers in all modern wireless networking devices and mobile phones are mass-produced using RF CMOS devices. [27] RF CMOS circuits are widely used to transmit and receive wireless signals in a variety of applications, such as satellite technology (such as GPS), Bluetooth, Wi-Fi, near-field ...

  6. CMOS - Wikipedia

    en.wikipedia.org/wiki/CMOS

    CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]

  7. RFIC - Wikipedia

    en.wikipedia.org/wiki/RFIC

    This interest is bolstered by the pervasiveness of wireless capabilities in electronics. Current research focuses on integrating the RF power amplifier (PA) with CMOS technology, either by using MOSFETs or SiGe HBTs, on RF CMOS mixed-signal integrated circuit chips.

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