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A thin-film transistor (TFT) is a special type of field-effect transistor (FET) where the transistor is made by thin film deposition. TFTs are grown on a supporting (but non-conducting) substrate , such as glass .
An oxide thin-film transistor (oxide TFT) or metal oxide thin film transistor is a type of thin film transistor where the semiconductor is a metal oxide compound. An oxide TFT is distinct from a metal oxide field effect transistor where the word "oxide" refers to the insulating gate dielectric (normally silicon dioxide). In an oxide TFT, the ...
In February 1957, John Wallmark of RCA filed a patent for a thin film MOSFET. Paul K. Weimer, also of RCA, implemented Wallmark's ideas and developed the thin-film transistor (TFT) in 1962, a type of MOSFET distinct from the standard bulk MOSFET. It was made with thin films of cadmium selenide and cadmium sulfide.
The concept of a thin-film transistor (TFT) was first proposed by John Wallmark who in 1957 filed a patent for a thin film MOSFET in which germanium monoxide was used as a gate dielectric. Thin-film transistor was developed in 1962 by Paul K. Weimer who implemented Wallmark's ideas. [16] The TFT is a special type of MOSFET. [17]
Thin film electronics may refer to: Devices. Thin-film diode; Thin-film transistor; Organic field-effect transistor; Thin-film solar cell. Silicon thin-film cell;
IGZO is widely used in thin-film transistors (TFT) for display applications, such as in the TFT backplane of flat-panel displays (FPDs). IGZO-TFT was developed by Hideo Hosono's group at Tokyo Institute of Technology and Japan Science and Technology Agency (JST) in 2003 (crystalline IGZO-TFT) [4] [5] and in 2004 (amorphous IGZO-TFT). [6]
More specifically, the use of polycrystalline silicon in thin-film transistors (LTPS-TFT) has high potential for large-scale production of electronic devices like flat panel LCD displays or image sensors. [1] LTPS is polycrystalline silicon that has been synthesized at ~650 °C and lower, compared to traditional methods (above 900 °C).
A high-resolution matrix LCD with required fast response (e.g. for animated graphics and/or video) necessitates integration of additional non-linear electronic elements into each picture element of the display (e.g., thin-film diodes, TFDs, or thin-film transistors, TFTs) in order to allow active matrix-addressing of individual picture elements ...
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