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The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
Internal resistance causes "leveling off" of a real diode's I–V curve at high forward bias. The Shockley equation doesn't model this, but adding a resistance in series will. The reverse breakdown region (particularly of interest for Zener diodes) is not modeled by the Shockley equation.
Tunnel diodes and Gunn diodes are examples of components that have negative resistance. Hysteresis vs single-valued: Devices which have hysteresis; that is, in which the current–voltage relation depends not only on the present applied input but also on the past history of inputs, have I–V curves consisting of families of closed loops. Each ...
The points where the characteristic curve and the load line intersect are the possible operating point(s) of the circuit; at these points the current and voltage parameters of both parts of the circuit match. [1] The example at right shows how a load line is used to determine the current and voltage in a simple diode circuit.
Electron and hole trapping in the Shockley-Read-Hall model. In the SRH model, four things can happen involving trap levels: [11] An electron in the conduction band can be trapped in an intragap state. An electron can be emitted into the conduction band from a trap level. A hole in the valence band can be captured by a trap.
The last image we have of Patrick Cagey is of his first moments as a free man. He has just walked out of a 30-day drug treatment center in Georgetown, Kentucky, dressed in gym clothes and carrying a Nike duffel bag.
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