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A transient-voltage-suppression diode can respond to over-voltages faster than other common over-voltage protection components such as varistors or gas discharge tubes. The actual clamping occurs in roughly one picosecond , but in a practical circuit the inductance of the wires leading to the device imposes a higher limit.
20779 Ensembl ENSG00000197122 ENSMUSG00000027646 UniProt P12931 P05480 RefSeq (mRNA) NM_005417 NM_198291 NM_001025395 NM_009271 RefSeq (protein) NP_005408 NP_938033 NP_001020566 NP_033297 Location (UCSC) Chr 20: 37.34 – 37.41 Mb Chr 2: 157.42 – 157.47 Mb PubMed search Wikidata View/Edit Human View/Edit Mouse Proto-oncogene tyrosine-protein kinase Src, also known as proto-oncogene c-Src, or ...
Like an SCR, when a voltage pulse is present on the gate terminal, the device turns on. The main difference between an SCR and a Triac is that both the positive and negative cycle can be turned on independently of each other, using a positive or negative gate pulse. Similar to an SCR, once the device is turned on, the device cannot be turned off.
It is known as a current-limiting diode (CLD) or current-regulating diode (CRD). Internal structure. It consists of an n-channel JFET with the gate shorted to the source, which functions like a two-terminal current limiter (analogous to a voltage-limiting Zener diode). It allows a current through it to rise to a certain value, but not higher.
The reverse bias rating of the N-drift region to collector P+ diode is usually only of tens of volts, so if the circuit application applies a reverse voltage to the IGBT, an additional series diode must be used. The minority carriers injected into the N-drift region take time to enter and exit or recombine at turn-on and turn-off.
The junction of an avalanche diode is designed to prevent current concentration and resulting hot spots, so that the diode is undamaged by the breakdown. The avalanche breakdown is due to minority carriers accelerated enough to create ionization in the crystal lattice, producing more carriers, which in turn create more ionization.
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
A sample GSR signal of 60 seconds duration. Electrodermal activity (EDA) is the property of the human body that causes continuous variation in the electrical characteristics of the skin.