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The carrier concentration can be calculated by treating electrons moving back and forth across the bandgap just like the equilibrium of a reversible reaction from chemistry, leading to an electronic mass action law. The mass action law defines a quantity called the intrinsic carrier concentration, which for undoped materials:
This allows us to treat the original semiconductor as unaffected in its electronic properties, with the impurity atoms only increasing the electron concentration. A limit to donor concentration in order to allow treatment as shallow donors is approximately 10 19 cm −3. Energy levels due to impurities deeper in the bandgap are called deep levels.
Then the electron mobility μ is defined as =. Electron mobility is almost always specified in units of cm 2 /(V⋅s). This is different from the SI unit of mobility, m 2 /(V⋅s). They are related by 1 m 2 /(V⋅s) = 10 4 cm 2 /(V⋅s). Conductivity is proportional to the product of mobility and carrier concentration. For example, the same ...
The electron–hole pair is the fundamental unit of generation and recombination in inorganic semiconductors, corresponding to an electron transitioning between the valence band and the conduction band where generation of an electron is a transition from the valence band to the conduction band and recombination leads to a reverse transition.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
When ionizing radiation strikes a semiconductor, it may excite an electron out of its energy level and consequently leave a hole. This process is known as electron-hole pair generation. Electron-hole pairs are constantly generated from thermal energy as well, in the absence of any external energy source. Electron-hole pairs are also apt to ...
Diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (electrons and/or electron holes).This is the current which is due to the transport of charges occurring because of non-uniform concentration of charged particles in a semiconductor.
Electron density or electronic density is the measure of the probability of an electron being present at an infinitesimal element of space surrounding any given point. It is a scalar quantity depending upon three spatial variables and is typically denoted as either ρ ( r ) {\displaystyle \rho ({\textbf {r}})} or n ( r ) {\displaystyle n ...