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Charge carrier density, also known as carrier concentration, denotes the number of charge carriers per volume. In SI units, it is measured in m −3. As with any density, in principle it can depend on position. However, usually carrier concentration is given as a single number, and represents the average carrier density over the whole material.
In electrochemistry, the electrochemical potential of electrons (or any other species) is the total potential, including both the (internal, nonelectrical) chemical potential and the electric potential, and is by definition constant across a device in equilibrium, whereas the chemical potential of electrons is equal to the electrochemical ...
The semiconductor materials used in electronic devices are doped under precise conditions to control the concentration and regions of p- and n-type dopants. A single semiconductor device crystal can have many p- and n-type regions; the p–n junctions between these regions are responsible for the useful electronic behavior.
This allows us to treat the original semiconductor as unaffected in its electronic properties, with the impurity atoms only increasing the electron concentration. A limit to donor concentration in order to allow treatment as shallow donors is approximately 10 19 cm −3. Energy levels due to impurities deeper in the bandgap are called deep levels.
Effective concentration (activity) 1 mol/L for each aqueous or amalgamated (mercury-alloyed) species; Unit activity for each solvent and pure solid or liquid species; and; Absolute partial pressure 101.325 kPa (1.00000 atm; 1.01325 bar) for each gaseous reagent — the convention in most literature data but not the current standard state (100 kPa).
Pure water has a charge carrier density similar to semiconductors [12] [page needed] since it has a low autoionization, K w = 1.0×10 −14 at room temperature and thus pure water conducts current poorly, 0.055 μS/cm. [13] Unless a large potential is applied to increase the autoionization of water, electrolysis of pure water proceeds slowly ...
The tool is used primarily for determining doping structures in silicon semiconductors. Deep and shallow profiles are shown in Figure 2. Figure 2 The shallow profile on the left, the deep profile on the right. Carrier concentration is plotted against depth. Regions with a net electron concentration are denoted as "n" (or n-type).
The electron–hole pair is the fundamental unit of generation and recombination in inorganic semiconductors, corresponding to an electron transitioning between the valence band and the conduction band where generation of an electron is a transition from the valence band to the conduction band and recombination leads to a reverse transition.