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Irongate chipset family; early steppings had issues with AGP 2×; drivers often limited support to AGP 1×; later fixed with "super bypass" memory access adjustment. [1] AMD-760 chipset AMD-761 Nov 2000 Athlon, Athlon XP, Duron , Alpha 21264. 133 (FSB) AMD-766, VIA-T82C686B AGP 4×, DDR SDRAM AMD-760MP chipset AMD-762 May 2001 Athlon MP
It has 1331 pin slots and is the first from AMD to support DDR4 memory as well as achieve unified compatibility between high-end CPUs (previously using Socket AM3+) and AMD's lower-end APUs (on various other sockets). [3] [4] In 2017, AMD made a commitment to using the AM4 platform with socket 1331 until 2020.
A memory rank is a set of DRAM chips connected to the same chip select, which are therefore accessed simultaneously. In practice all DRAM chips share all of the other command and control signals, and only the chip select pins for each rank are separate (the data pins are shared across ranks).
Zen 3 is the name for a CPU microarchitecture by AMD, released on November 5, 2020. [2] [3] It is the successor to Zen 2 and uses TSMC's 7 nm process for the chiplets and GlobalFoundries's 14 nm process for the I/O die on the server chips and 12 nm for desktop chips. [4]
"Hearst Magazines and Yahoo may earn commission or revenue on some items through these links." Good sleep is crucial for your overall health, but new research suggests it could impact your ...
The architecture can be used only when all four memory modules (or a multiple of four) are identical in capacity and speed, and are placed in quad-channel slots. When two memory modules are installed, the architecture will operate in a dual-channel mode; When three memory modules are installed, the architecture will operate in a triple-channel ...
See today's average mortgage rates for a 30-year fixed mortgage, 15-year fixed, jumbo loans, refinance rates and more — including up-to-date rate news.
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...