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Reliability of a semiconductor device is the ability of the device to ... and cooling conditions. Stress factors affecting device reliability include gas ...
In semiconductor devices, problems in the device package may cause failures due to contamination, mechanical stress of the device, or open or short circuits. Failures most commonly occur near the beginning and near the ending of the lifetime of the parts, resulting in the bathtub curve graph of failure rates.
Time-dependent gate oxide breakdown (or time-dependent dielectric breakdown, TDDB) is a kind of transistor aging, a failure mechanism in MOSFETs, when the gate oxide breaks down as a result of long-time application of relatively low electric field (as opposed to immediate breakdown, which is caused by strong electric field).
This method ages all IC's building blocks to allow relevant failure modes to be triggered and implemented in a short reliability experiment. A precise multiplier, known as the Acceleration Factor (AF) simulates long lifetime operation. The AF represents the accelerated aging factor relative to the useful life application conditions.
graph with an example of steps in a failure mode and effects analysis. Failure mode and effects analysis (FMEA; often written with "failure modes" in plural) is the process of reviewing as many components, assemblies, and subsystems as possible to identify potential failure modes in a system and their causes and effects.
Negative-bias temperature instability (NBTI) is a key reliability issue in MOSFETs, a type of transistor aging. NBTI manifests as an increase in the threshold voltage and consequent decrease in drain current and transconductance of a MOSFET. The degradation is often approximated by a power-law dependence on time.
The Mil-HDBK-217 reliability calculator manual in combination with RelCalc software (or other comparable tool) enables MTBF reliability rates to be predicted based on design. A concept which is closely related to MTBF, and is important in the computations involving MTBF, is the mean down time (MDT). MDT can be defined as mean time which the ...
QBD is the term applied to the charge-to-breakdown measurement of a semiconductor device. It is a standard destructive test method used to determine the quality of gate oxides in MOS devices. It is equal to the total charge passing through the dielectric layer (i.e. electron or hole fluence multiplied by the elementary charge) just before failure.
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