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[citation needed] For example, the internal structure of an NPN bipolar transistor resembles two P-N junction diodes connected together by a common anode. In normal operation the base-emitter junction does indeed form a diode, but in most cases it is undesirable for the base-collector junction to behave as a diode.
In a diode model two diodes are connected back-to-back to make a PNP or NPN bipolar junction transistor (BJT) equivalent. This model is theoretical and qualitative. This model is theoretical and qualitative.
Ebers–Moll model for an NPN transistor. [28] I B, I C and I E are the base, collector and emitter currents; I CD and I ED are the collector and emitter diode currents; α F and α R are the forward and reverse common-base current gains. Ebers–Moll model for a PNP transistor Approximated Ebers–Moll model for an NPN transistor in the ...
p–n junctions represent the simplest case of a semiconductor electronic device; a p-n junction by itself, when connected on both sides to a circuit, is a diode. More complex circuit components can be created by further combinations of p-type and n-type semiconductors; for example, the bipolar junction transistor (BJT) is a semiconductor in ...
The BC548 is a part of a family of NPN and PNP epitaxial silicon transistors that originated with the metal-cased BC108 family of transistors.The BC548 is the modern plastic-packaged BC108; [6] the BC548 article at the Radiomuseum website [7] describes the BC548 as a successor to the BC238 and differing from the BC108 in only the shape of the package.
Alternately, if a germanium PNP device was used, it would have significantly different characteristics than the silicon NPN transistor. In the quasi-complementary topology, the performance of the lower pull pair, which uses a single NPN transistor, more closely matches the performance of the upper push pair, which consists of two NPN ...
The Type 575 Transistor-Curve Tracer displays the dynamic characteristic curves of both NPN and PNP transistors on the screen of a 5-inch cathode-ray tube. Several different transistor characteristic curves may be displayed, including the collector family in the common-base and common emitter configuration. In addition to the transistor ...
The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. [1] [2] It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3904 NPN transistor. [3]