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A memristor (/ ˈ m ɛ m r ɪ s t ər /; a portmanteau of memory resistor) is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage.It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which also comprises the resistor, capacitor and inductor.
Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.
While the memristor is defined in terms of a two-terminal circuit element, there was an implementation of a three-terminal device called a memistor developed by Bernard Widrow in 1960. Memistors formed basic components of a neural network architecture called ADALINE developed by Widrow. [1] [2] The memistor was also used in MADALINE.
RRAM (ReRAM) works by changing the resistance across a dielectric solid-state material often referred to as a memristor. ReRAM involves generating defects in a thin oxide layer, known as oxygen vacancies (oxide bond locations where the oxygen has been removed), which can subsequently charge and drift under an electric field.
The memory cell is the fundamental building block of memory. It can be implemented using different technologies, such as bipolar, MOS, and other semiconductor devices.It can also be built from magnetic material such as ferrite cores or magnetic bubbles. [1]
It is a combination of the memristor and transistor technology. [2] This technology is different from the 1T-1R approach since the devices are merged into one single entity. Multiple memristors can be embedded with a single transistor, enabling it to more accurately model a neuron with its multiple synaptic connections.
The Williams tube works by displaying a grid of dots on a cathode-ray tube (CRT). Due to the way CRTs work, this creates a small charge of static electricity over each dot. The charge at the location of each of the dots is read by a thin metal sheet just in front of the display.
Substantial work in the field was carried out by the Shanghai-born American physicists An Wang and Way-Dong Woo, who created the pulse transfer controlling device in 1949. [10] The patent described a type of memory that would today be known as a delay-line or shift-register system. Each bit was stored using a pair of transformers, one that held ...