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2. Multi-level cell - Wikipedia

   en.wikipedia.org/wiki/Multi-level_cell

   In 2013, Samsung introduced V-NAND (Vertical NAND, also known as 3D NAND) with triple-level cells, which had a memory capacity of 128 Gbit. [27] They expanded their TLC V-NAND technology to 256 Gbit memory in 2015, [24] and 512 Gbit in 2017. [28] Enterprise TLC (eTLC) is a more expensive variant of TLC that is optimized for commercial use.

3. Charge trap flash - Wikipedia

   en.wikipedia.org/wiki/Charge_trap_flash

   Toshiba in 2007 [24] and Samsung in 2009 [25] announced the development of 3D V-NAND, a means of building a standard NAND flash bit string vertically rather than horizontally to increase the number of bits in a given area of silicon. Figure 6. Vertical NAND structure. A rough idea of the cross section of this is shown in figure 6.

4. Flash memory - Wikipedia

   en.wikipedia.org/wiki/Flash_memory

   In July 2016, Samsung announced the 4 TB [clarification needed] Samsung 850 EVO which utilizes their 256 Gbit 48-layer TLC 3D V-NAND. [183] In August 2016, Samsung announced a 32 TB 2.5-inch SAS SSD based on their 512 Gbit 64-layer TLC 3D V-NAND. Further, Samsung expects to unveil SSDs with up to 100 TB of storage by 2020. [184]

5. 3D memory - Wikipedia

   en.wikipedia.org/wiki/3D_memory

   V-NAND (3D NAND) flash memory; 3D integrated circuit (3D IC) memory chips This page was last edited on 19 July 2019, at 21:32 (UTC). Text is available under the ...

6. Headlamp - Wikipedia

   en.wikipedia.org/wiki/Headlamp

   It is a 12.8-volt, transverse dual-filament design that produces 700 lumens on low beam and 1200 lumens on high beam. The 9004 is rated for 65 watts (high beam) and 45 watts (low beam) at 12.8 volts. Other US approved halogen bulbs include the HB3 (65 W, 12.8 V), HB4 (55 W, 12.8 V), and HB5 (65/55 watts, 12.8 V). [98]

7. Universal Flash Storage - Wikipedia

   en.wikipedia.org/wiki/Universal_Flash_Storage

   UFS uses NAND flash. It may use multiple stacked 3D TLC NAND flash dies (integrated circuits) with an integrated controller. [4] The proposed flash memory specification is supported by consumer electronics companies such as Nokia, Sony Ericsson, Texas Instruments, STMicroelectronics, Samsung, Micron, and SK Hynix. [5]