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Bipolar transistors can be considered voltage-controlled devices (fundamentally the collector current is controlled by the base–emitter voltage; the base current could be considered a defect and is controlled by the characteristics of the base–emitter junction and recombination in the base).
Early, is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage. A greater reverse bias across the collector–base junction, for example, increases the collector–base depletion width, thereby decreasing the width of the charge carrier portion of the ...
A load line diagram, illustrating an operating point in the transistor's active region.. Biasing is the setting of the DC operating point of an electronic component. For bipolar junction transistors (BJTs), the operating point is defined as the steady-state DC collector-emitter voltage and the collector current with no input signal applied.
A parasitic NPN bipolar junction transistor (BJT) is thus formed with the drain acting as the collector, the base/source combination (n-type) as the emitter, and the substrate as the base. As is explained below, a key element to the operation of the ggNMOS is the parasitic resistance present between the emitter and base terminals of the ...
If the bias current is not shunted to ground because the input is high-z (high logic level), the bias current flows through the transistor to the emitter, switching on the transistor, and allowing the collector to sink current (low logic level). Because the output of the inverter can sink current but cannot source current, it is safe to connect ...
Figure 1: Basic NPN common collector circuit (neglecting biasing details).. In electronics, a common collector amplifier (also known as an emitter follower) is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a voltage buffer.
Schematic of Spice Gummel–Poon model NPN. The Gummel–Poon model is a model of the bipolar junction transistor.It was first described in an article published by Hermann Gummel and H. C. Poon at Bell Labs in 1970.
In electronics, the Gummel plot is the combined plot of the base and collector electric currents, and , of a bipolar transistor vs. the base–emitter voltage, , on a semi-logarithmic scale. This plot is very useful in device characterization because it reflects on the quality of the emitter–base junction while the base–collector bias, V bc ...