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  2. Zener effect - Wikipedia

    en.wikipedia.org/wiki/Zener_effect

    The Zener effect is distinct from avalanche breakdown. Avalanche breakdown involves minority carrier electrons in the transition region being accelerated, by the electric field, to energies sufficient for freeing electron-hole pairs via collisions with bound electrons. The Zener and the avalanche effect may occur simultaneously or independently ...

  3. Avalanche breakdown - Wikipedia

    en.wikipedia.org/wiki/Avalanche_breakdown

    Avalanche diodes (commonly encountered as high voltage Zener diodes) are constructed to break down at a uniform voltage and to avoid current crowding during breakdown. These diodes can indefinitely sustain a moderate level of current during breakdown. The voltage at which the breakdown occurs is called the breakdown voltage.

  4. Avalanche diode - Wikipedia

    en.wikipedia.org/wiki/Avalanche_diode

    Avalanche diodes are optimized for avalanche effect, so they exhibit small but significant voltage drop under breakdown conditions, unlike Zener diodes that always maintain a voltage higher than breakdown. [dubious – discuss] This feature provides better surge protection than a simple Zener diode and acts more like a gas-discharge tube ...

  5. Zener diode - Wikipedia

    en.wikipedia.org/wiki/Zener_diode

    A subsurface Zener diode, also called a buried Zener, is a device similar to the surface Zener, but the doping and design is such that the avalanche region is located deeper in the structure, typically several micrometers below the oxide. Hot carriers then lose energy by collisions with the semiconductor lattice before reaching the oxide layer ...

  6. Diode - Wikipedia

    en.wikipedia.org/wiki/Diode

    The difference between the avalanche diode (which has a reverse breakdown above about 6.2 V) and the Zener is that the channel length of the former exceeds the mean free path of the electrons, resulting in many collisions between them on the way through the channel.

  7. Electron avalanche - Wikipedia

    en.wikipedia.org/wiki/Electron_avalanche

    Where V is the applied voltage, V BR is the breakdown voltage and n is an empirically derived value between 2 and 6. As can be seen from this formula, the multiplication factor is very highly dependent on the applied voltage, and as the voltage nears the breakdown voltage of the material, the multiplication factor approaches infinity and the ...

  8. Noise generator - Wikipedia

    en.wikipedia.org/wiki/Noise_generator

    In an avalanche, one carrier collides with other atoms and knocks free new carriers. The result is that for each carrier that starts across a barrier, several carriers synchronously arrive. The result is a wide-bandwidth high-power source. Conventional diodes can be used in breakdown. The avalanche breakdown also has multistate noise.

  9. Breakdown voltage - Wikipedia

    en.wikipedia.org/wiki/Breakdown_voltage

    Breakdown voltage is a characteristic of an insulator that defines the maximum voltage difference that can be applied across the material before the insulator conducts. In solid insulating materials, this usually [citation needed] creates a weakened path within the material by creating permanent molecular or physical changes by the sudden current.