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RAS only refresh – In this mode the address of the row to refresh is provided by the address bus lines typically generated by external counters in the memory controller. CAS before RAS refresh (CBR) – In this mode the on-chip counter keeps track of the row to be refreshed and the external circuit merely initiates the refresh cycles. [5]
A memory controller, also known as memory chip controller (MCC) or a memory controller unit (MCU), is a digital circuit that manages the flow of data going to and from a computer's main memory. [ 1 ] [ 2 ] When a memory controller is integrated into another chip, such as an integral part of a microprocessor , it is usually called an integrated ...
DRAM SO-DIMM. In 2002, the United States Department of Justice, under the Sherman Antitrust Act, began a probe into the activities of dynamic random-access memory (DRAM) manufacturers in response to claims by US computer makers, including Dell and Gateway, that inflated DRAM pricing was causing lost profits and hindering their effectiveness in the marketplace.
SDRAM designed for battery-powered devices offers some additional power-saving options. One is temperature-dependent refresh; an on-chip temperature sensor reduces the refresh rate at lower temperatures, rather than always running it at the worst-case rate. Another is selective refresh, which limits self-refresh to a portion of the DRAM array.
Rowhammer (also written as row hammer) is a computer security exploit that takes advantage of an unintended and undesirable side effect in dynamic random-access memory (DRAM) in which memory cells interact electrically between themselves by leaking their charges, possibly changing the contents of nearby memory rows that were not addressed in the original memory access.
SRAM offers a simple data access model and does not require a refresh circuit. Performance and reliability are good and power consumption is low when idle. [11] Since SRAM requires more transistors per bit to implement, it is less dense and more expensive than DRAM and also has a higher power consumption during read or write access. The power ...
A review article [9] provides the details of materials and challenges associated with MRAM in the perpendicular geometry. The authors describe a new term called "Pentalemma", which represents a conflict in five different requirements such as write current, stability of the bits, readability, read/write speed and the process integration with CMOS.
Perhaps a key to the initial success of the Z80 was the built-in DRAM refresh, at least in markets such as CP/M and other office and home computers. (Most Z80 embedded systems use static RAM that do not need refresh.) It may also have been its minimalistic two-level interrupt system, or conversely, its general multi-level daisy-chain interrupt ...