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Column address strobe latency, also called CAS latency or CL, is the delay in clock cycles between the READ command and the moment data is available. [ 1 ] [ 2 ] In asynchronous DRAM , the interval is specified in nanoseconds (absolute time). [ 3 ]
With this 1 ns clock, a CAS latency of 7 gives an absolute CAS latency of 7 ns. Faster DDR3-2666 memory (with a 1333 MHz clock, or 0.75 ns exactly; the 1333 is rounded) may have a larger CAS latency of 9, but at a clock frequency of 1333 MHz the amount of time to wait 9 clock cycles is only 6.75 ns.
Data in DRAM is stored in units of pages. Each DRAM bank has a row buffer that serves as a cache for accessing any page in the bank. Before a page in the DRAM bank is read, it is first loaded into the row-buffer. If the page is immediately read from the row-buffer (or a row-buffer hit), it has the shortest memory access latency in one memory cycle.
While the access latency of DRAM is fundamentally limited by the DRAM array, DRAM has very high potential bandwidth because each internal read is actually a row of many thousands of bits. To make more of this bandwidth available to users, a double data rate interface was developed. This uses the same commands, accepted once per cycle, but reads ...
Memory latency is the time (the latency) between initiating a request for a byte or word in memory until it is retrieved by a processor. If the data are not in the processor's cache , it takes longer to obtain them, as the processor will have to communicate with the external memory cells.
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
In computing, a memory access pattern or IO access pattern is the pattern with which a system or program reads and writes memory on secondary storage.These patterns differ in the level of locality of reference and drastically affect cache performance, [1] and also have implications for the approach to parallelism [2] [3] and distribution of workload in shared memory systems. [4]
Reduced Latency DRAM (RLDRAM) is a type of specialty dynamic random-access memory (DRAM) with a SRAM-like interface originally developed by Infineon Technologies.It is a high-bandwidth, semi-commodity, moderately low-latency (relative to contemporaneous SRAMs) memory targeted at embedded applications (such as computer networking equipment) requiring memories that have moderate costs and low ...