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For a completely unknown memory access (AKA Random access), the relevant latency is the time to close any open row, plus the time to open the desired row, followed by the CAS latency to read data from it. Due to spatial locality, however, it is common to access several words in the same row. In this case, the CAS latency alone determines the ...
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
While the access latency of DRAM is fundamentally limited by the DRAM array, DRAM has very high potential bandwidth because each internal read is actually a row of many thousands of bits. To make more of this bandwidth available to users, a double data rate interface was developed. This uses the same commands, accepted once per cycle, but reads ...
Data in DRAM is stored in units of pages. Each DRAM bank has a row buffer that serves as a cache for accessing any page in the bank. Before a page in the DRAM bank is read, it is first loaded into the row-buffer. If the page is immediately read from the row-buffer (or a row-buffer hit), it has the shortest memory access latency in one memory cycle.
With this 1 ns clock, a CAS latency of 7 gives an absolute CAS latency of 7 ns. Faster DDR3-2666 memory (with a 1333 MHz clock, or 0.75 ns exactly; the 1333 is rounded) may have a larger CAS latency of 9, but at a clock frequency of 1333 MHz the amount of time to wait 9 clock cycles is only 6.75 ns.
The commands correspond to standard DRAM access cycles, such as row select, precharge, and refresh commands. Read and write commands include only column addresses. All commands include a 3-bit FB-DIMM address, allowing up to 8 FB-DIMM modules on a channel.
Memory latency is the time (the latency) between initiating a request for a byte or word in memory until it is retrieved by a processor. If the data are not in the processor's cache , it takes longer to obtain them, as the processor will have to communicate with the external memory cells.
Reduced Latency DRAM (RLDRAM) is a type of specialty dynamic random-access memory (DRAM) with a SRAM-like interface originally developed by Infineon Technologies.It is a high-bandwidth, semi-commodity, moderately low-latency (relative to contemporaneous SRAMs) memory targeted at embedded applications (such as computer networking equipment) requiring memories that have moderate costs and low ...