Search results
Results from the WOW.Com Content Network
PC2-5300 DDR2 SO-DIMM (for notebooks) Comparison of memory modules for desktop PCs (DIMM) Comparison of memory modules for portable/mobile PCs (SO-DIMM) The key difference between DDR2 and DDR SDRAM is the increase in prefetch length. In DDR SDRAM, the prefetch length was two bits for every bit in a word; whereas it is four bits in DDR2 SDRAM.
A Qimonda 2 GB DDR2-800 SODIMM Module. Qimonda's knowledge-base and collection of 20,000 patents remain very valuable. It was one of only three companies [clarification needed] in the world to have mass produced GDDR3, GDDR5, and XDR memory. Winbond of Taiwan was able to achieve relatively good gross margins using trench technology licensed ...
Typically DIMM or SO-DIMM. ... DDR1 memory's prices substantially increased from Q2 2008, while DDR2 prices declined. In January 2009, 1 GB DDR1 was 2–3 times more ...
Assorted SO-DIMM Modules A 200-pin PC2-5300 DDR2 SO-DIMM. A 204-pin PC3-10600 DDR3 SO-DIMM. A SO-DIMM slot on a computer motherboard. A SO-DIMM (pronounced "so-dimm" / ˈ s oʊ d ɪ m /, also spelled "SODIMM") or small outline DIMM, is a smaller alternative to a DIMM, being roughly half the physical size of a regular DIMM. The first SODIMMs had ...
There are several limits on DRAM performance. Most noted is the read cycle time, the time between successive read operations to an open row. This time decreased from 10 ns for 100 MHz SDRAM (1 MHz = Hz) to 5 ns for DDR-400, but remained relatively unchanged through DDR2-800 and DDR3-1600 generations. However, by operating the interface ...
Compression Attached Memory Module (CAMM) is a memory module form factor which uses a land grid array, and developed at Dell by engineer Tom Schnell as a replacement for DIMMs and SO-DIMMs which use edge connectors and had been in use for about 25 years. [1] The first SO-DIMMs were introduced by JEDEC in 1997. [2] [3] [4] [5]
DDR2 and DDR3 increased this factor to 4× and 8×, respectively, delivering 4-word and 8-word bursts over 2 and 4 clock cycles, respectively. The internal access rate is mostly unchanged (200 million per second for DDR-400, DDR2-800 and DDR3-1600 memory), but each access transfers more data.
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process.