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Flash memory, a type of floating-gate memory, was invented by Fujio Masuoka at Toshiba in 1980 and is based on EEPROM technology. Toshiba began marketing flash memory in 1987. [1] EPROMs had to be erased completely before they could be rewritten. NAND flash memory, however, may be erased, written, and read in blocks (or pages), which generally ...
The Common Flash Memory Interface (CFI) is an open standard jointly developed by AMD, Intel, Sharp and Fujitsu. It is implementable by all flash memory vendors, and has been approved by the non-volatile-memory subcommittee of JEDEC. [1] [2] The goal of the specification is the interchangeability of flash memory devices offered by different ...
Multi-level cell (MLC) flash memory was introduced by NEC, which demonstrated quad-level cells in a 64 Mb flash chip storing 2-bit per cell in 1996. [ 25 ] 3D V-NAND , where flash memory cells are stacked vertically using 3D charge trap flash (CTP) technology, was first announced by Toshiba in 2007, [ 34 ] and first commercially manufactured by ...
Flash memory is a solid-state chip that maintains stored data without any external power source. It is a close relative to the EEPROM; it differs in that erase operations must be done on a block basis, and its capacity is substantially larger than that of an EEPROM. Flash memory devices use two different technologies—NOR and NAND—to map data.
Usually, flash memory controllers also include the "flash translation layer" (FTL), a layer below the file system that maps host side or file system logical block addresses (LBAs) to the physical address of the flash memory (logical-to-physical mapping). The LBAs refer to sector numbers and to a mapping unit of 512 bytes.
Charge trap flash (CTF) is a semiconductor memory technology used in creating non-volatile NOR and NAND flash memory. It is a type of floating-gate MOSFET memory technology , but differs from the conventional floating-gate technology in that it uses a silicon nitride film to store electrons rather than the doped polycrystalline silicon typical ...
Anti-lock braking systems, air bags, car radios, cell phones, consumer electronics, cordless telephones, disk drives, embedded memory, flight controllers, military technology, modems, pagers, printers, set-top box, smart cards [41] [42] Flash memory: Flash Floating-gate MOSFET
The basis for memory card technology is flash memory. [2] It was invented by Fujio Masuoka at Toshiba in 1980 [3] [4] and commercialized by Toshiba in 1987. [5] [6]