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In 2013, Samsung introduced V-NAND (Vertical NAND, also known as 3D NAND) with triple-level cells, which had a memory capacity of 128 Gbit. [27] They expanded their TLC V-NAND technology to 256 Gbit memory in 2015, [24] and 512 Gbit in 2017. [28] Enterprise TLC (eTLC) is a more expensive variant of TLC that is optimized for commercial use.
Toshiba in 2007 [24] and Samsung in 2009 [25] announced the development of 3D V-NAND, a means of building a standard NAND flash bit string vertically rather than horizontally to increase the number of bits in a given area of silicon. Figure 6. Vertical NAND structure. A rough idea of the cross section of this is shown in figure 6.
In July 2016, Samsung announced the 4 TB [clarification needed] Samsung 850 EVO which utilizes their 256 Gbit 48-layer TLC 3D V-NAND. [183] In August 2016, Samsung announced a 32 TB 2.5-inch SAS SSD based on their 512 Gbit 64-layer TLC 3D V-NAND. Further, Samsung expects to unveil SSDs with up to 100 TB of storage by 2020. [184]
V-NAND (3D NAND) flash memory; 3D integrated circuit (3D IC) memory chips This page was last edited on 19 July 2019, at 21:32 (UTC). Text is available under the ...
UFS uses NAND flash. It may use multiple stacked 3D TLC NAND flash dies (integrated circuits) with an integrated controller. [4] The proposed flash memory specification is supported by consumer electronics companies such as Nokia, Sony Ericsson, Texas Instruments, STMicroelectronics, Samsung, Micron, and SK Hynix. [5]
32-Layer 3D TLC PCIe 3.0 x4 NVMe M.2 Silicon Motion SM2260 1800/560 155/128 August 2016 Endurance: 72 TB to 576 TB, Power Active Average: 0.1W [69] Pro 6000p Pleasant Star 128/256/360/512/1024 32-Layer 3D TLC PCIe 3.0 x4 NVMe M.2 Silicon Motion SM2260 1800/560 155/128 August 2016 Endurance: 72 TB to 576 TB, Power Active Average: 0.1W [70]
In August 2022 YMTC unveiled the X3-9070, its first 232-layer 3D NAND chip. [24] [25] In October 2022 Apple announced that it would drop a plan to use YMTC memory chips in its phones amid political pressure. [26] [7] In November 2022 a TechInsights report stated that YMTC had delivered 232-layer 3D NAND Flash to the market. [27] [28] [29]
Development of 3D XPoint began around 2012. [8] Intel and Micron had developed other non-volatile phase-change memory (PCM) technologies previously; [note 1] Mark Durcan of Micron said 3D XPoint architecture differs from previous offerings of PCM, and uses chalcogenide materials for both selector and storage parts of the memory cell that are faster and more stable than traditional PCM ...