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Plasma-enhanced chemical vapor deposition (PECVD) is a chemical vapor deposition process used to deposit thin films from a gas state to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases.
DC plasma (violet) enhances the growth of carbon nanotubes in a laboratory-scale PECVD (plasma-enhanced chemical vapor deposition) apparatus. Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials.
Plasma (argon-only on the left, argon and silane on the right) inside a prototype LEPECVD reactor at the LNESS laboratory in Como, Italy.. Low-energy plasma-enhanced chemical vapor deposition (LEPECVD) is a plasma-enhanced chemical vapor deposition technique used for the epitaxial deposition of thin semiconductor (silicon, germanium and SiGe alloys) films.
Sputter deposition: a glow plasma discharge (usually localized around the "target" by a magnet) bombards the material sputtering some away as a vapor for subsequent deposition. Pulsed electron deposition: a highly energetic pulsed electron beam ablates material from the target generating a plasma stream under nonequilibrium conditions.
Nanotubes being grown by plasma enhanced chemical vapor deposition Animated pent-first nucleation. The catalytic vapor phase deposition of carbon was reported in 1952 [ 11 ] and 1959, [ 12 ] but it was not until 1993 [ 13 ] that carbon nanotubes were formed by this process.
When the source is a chemical vapor precursor, the process is called chemical vapor deposition (CVD). The latter has several variants: low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), and plasma-assisted CVD (PACVD). Often a combination of PVD and CVD processes are used in the same or connected ...
This technique can be seen as a plasma-assisted chemical vapor deposition of boron. The typical workflow involves performing a glow discharge and injecting a gas containing boron into the vacuum vessel chamber. Boronization as a wall conditioning technique was first developed for the TEXTOR tokamak at the Forschungszentrum Jülich.
Substrate pretreatment in a plasma environment is required prior to deposition of thin films on mechanical components such as automotive parts, metal cutting tools and decorative fittings. The substrates are immersed in a plasma and biased to a high voltage of a few hundred volts.