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All diodes exhibit this variable junction capacitance, but varactors are manufactured to exploit the effect and increase the capacitance variation. The figure shows an example of a cross section of a varactor with the depletion layer formed of a p–n junction.
In electronics, a step recovery diode (SRD, snap-off diode or charge-storage diode or memory varactor [a]) is a semiconductor junction diode with the ability to generate extremely short pulses. It has a variety of uses in microwave (MHz to GHz range) electronics as pulse generator or parametric amplifier .
The thickness of the depletion layer of a reverse-biased semiconductor diode varies with the DC voltage applied across the diode. Any diode exhibits this effect (including p/n junctions in transistors), but devices specifically sold as variable capacitance diodes (also called varactors or varicaps ) are designed with a large junction area and a ...
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
A resonant-tunneling diode (RTD) is a diode with a resonant-tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. The current–voltage characteristic often exhibits negative differential resistance regions. All types of tunneling diodes make use of quantum mechanical tunneling. Characteristic ...
The work of physicist W. W. Hansen was instrumental in the development of the klystron and was cited by the Varian brothers in their 1939 paper. His resonator analysis, which dealt with the problem of accelerating electrons toward a target, could be used just as well to decelerate electrons (i.e., transfer their kinetic energy to RF energy in a ...
Various semiconductor diodes. Left: A four-diode bridge rectifier.Next to it is a 1N4148 signal diode.On the far right is a Zener diode.In most diodes, a white or black painted band identifies the cathode into which electrons will flow when the diode is conducting.
A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki and Yuriko Kurose when working at Tokyo Tsushin Kogyo, now known as Sony .