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Stan Williams of HP Labs also argued that ReRAM was a memristor. [21] However, others challenged this terminology and the applicability of memristor theory to any physically realizable device is open to question. [22] [23] [24] Whether redox-based resistively switching elements (ReRAM) are covered by the current memristor theory is disputed. [25]
In one of the technical reports [3] the memistor was described as follows: . Like the transistor, the memistor is a 3-terminal element. The conductance between two of the terminals is controlled by the time integral of the current in the third, rather than its instantaneous value as in the transistor.
A memristor (/ ˈ m ɛ m r ɪ s t ər /; a portmanteau of memory resistor) is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage.It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which also comprises the resistor, capacitor and inductor.
Often the isolation capabilities are inferior to the use of transistors if the on/off ratio for the selector is not sufficient, limiting the ability to operate very large arrays in this architecture. Chalcogenide-based threshold switches have been demonstrated as a viable selector for high-density PCM arrays [22]
Thirty-seven years after he predicted its existence, a working solid-state memristor was created by a team led by R. Stanley Williams at Hewlett Packard. [ 5 ] [ 6 ] Alongside Tamas Roska , Chua also introduced the first algorithmically programmable analog cellular neural network (CNN) processor.
That year, AMD (in a division later spun off as Spansion) announced a new flash memory technology it called "MirrorBit". [16] Spansion used this product to reduce manufacturing costs and extend the density range of NOR Flash memory past that of conventional NOR flash and to match the cost of the multi-level cell NOR flash being manufactured by ...
The ratio between DRAM and FSB is commonly referred to as "DRAM:FSB ratio". Memory dividers are only applicable to those chipsets in which memory speed is dependent on FSB speeds. Certain chipsets like nVidia 680i have separate memory and FSB lanes due to which memory clock and FSB clock are asynchronous and memory dividers are not used there.
Data compression ratio, also known as compression power, is a measurement of the relative reduction in size of data representation produced by a data compression algorithm. It is typically expressed as the division of uncompressed size by compressed size.