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  2. Ferroelectric RAM - Wikipedia

    en.wikipedia.org/wiki/Ferroelectric_RAM

    Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory .

  3. Wear leveling - Wikipedia

    en.wikipedia.org/wiki/Wear_leveling

    Wear leveling (also written as wear levelling) is a technique [1] for prolonging the service life of some kinds of erasable computer storage media, such as flash memory, which is used in solid-state drives (SSDs) and USB flash drives, and phase-change memory.

  4. Solid-state storage - Wikipedia

    en.wikipedia.org/wiki/Solid-state_storage

    RAM drive – a block of random-access memory that the operating system treats as if it were secondary storage; Sequential access memory – a class of data storage devices that read stored data in a sequence; Wear leveling – a technique for prolonging the service life of some kinds of erasable computer storage media, such as flash memory

  5. Non-volatile memory - Wikipedia

    en.wikipedia.org/wiki/Non-volatile_memory

    Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a form of random-access memory similar in construction to DRAM, both use a capacitor and transistor but instead of using a simple dielectric layer the capacitor, an F-RAM cell contains a thin ferroelectric film of lead zirconate titanate [Pb(Zr,Ti)O 3], commonly referred to as PZT. The Zr/Ti atoms in ...

  6. Flash memory - Wikipedia

    en.wikipedia.org/wiki/Flash_memory

    Its endurance may be from as little as 100 erase cycles for an on-chip flash memory, [32] to a more typical 10,000 or 100,000 erase cycles, up to 1,000,000 erase cycles. [33] NOR-based flash was the basis of early flash-based removable media; CompactFlash was originally based on it, though later cards moved to less expensive NAND flash.

  7. Charge trap flash - Wikipedia

    en.wikipedia.org/wiki/Charge_trap_flash

    Charge trap flash (CTF) is a semiconductor memory technology used in creating non-volatile NOR and NAND flash memory. It is a type of floating-gate MOSFET memory technology , but differs from the conventional floating-gate technology in that it uses a silicon nitride film to store electrons rather than the doped polycrystalline silicon typical ...

  8. Why it matters that Trump is deleting government data - AOL

    www.aol.com/why-matters-trump-deleting...

    However, it's important to note that these topline numbers from Data.gov represent only a back-of-the-envelope measure of data loss. Some datasets linked on the site aren't necessarily available ...

  9. EPROM - Wikipedia

    en.wikipedia.org/wiki/Eprom

    An EPROM (rarely EROM), or erasable programmable read-only memory, is a type of programmable read-only memory (PROM) chip that retains its data when its power supply is switched off. Computer memory that can retrieve stored data after a power supply has been turned off and back on is called non-volatile .