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It is possible to read, write and erase flash cards in the three slots and the internal one. It is also possible for an experienced user to replace the built-in 32 kB RAM chip with a bigger 128 or 512 kB static RAM chip. However, the latter requires some extra board modifications, and 512 kB is the biggest size that can be addressed by the Z88 ...
PMC, a technology developed to replace the widely used flash memory, providing a combination of longer lifetimes, lower power, and better memory density. Infineon Technologies , who licensed the technology in 2004, refers to it as conductive-bridging RAM , or CBRAM .
Its endurance may be from as little as 100 erase cycles for an on-chip flash memory, [32] to a more typical 10,000 or 100,000 erase cycles, up to 1,000,000 erase cycles. [33] NOR-based flash was the basis of early flash-based removable media; CompactFlash was originally based on it, though later cards moved to less expensive NAND flash.
RAM drive – a block of random-access memory that the operating system treats as if it were secondary storage; Sequential access memory – a class of data storage devices that read stored data in a sequence; Wear leveling – a technique for prolonging the service life of some kinds of erasable computer storage media, such as flash memory
It has been described as a memory storage technology that "combines the non-volatility of a data storage memory, like flash, with the speed, energy-efficiency, and endurance of a working memory, like DRAM" which means it could retain data like a hard drive. [2]
Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data ...
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Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a form of random-access memory similar in construction to DRAM, both use a capacitor and transistor but instead of using a simple dielectric layer the capacitor, an F-RAM cell contains a thin ferroelectric film of lead zirconate titanate [Pb(Zr,Ti)O 3], commonly referred to as PZT. The Zr/Ti atoms in ...