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A well-fitted hearing aid has more GBF than one that is loose. The shape of the earmold is a factor, with larger and heavier designs capable of delivering greater GBF. Hearing aid designs deliver gain in increasing steps depending on the severity of the patient's hearing loss; the range spans from 10 to 65 dB of gain.
For transistors, the current-gain–bandwidth product is known as the f T or transition frequency. [4] [5] It is calculated from the low-frequency (a few kilohertz) current gain under specified test conditions, and the cutoff frequency at which the current gain drops by 3 decibels (70% amplitude); the product of these two values can be thought of as the frequency at which the current gain ...
A gain greater than one (greater than zero dB), that is, amplification, is the defining property of an active device or circuit, while a passive circuit will have a gain of less than one. [4] The term gain alone is ambiguous, and can refer to the ratio of output to input voltage (voltage gain), current (current gain) or electric power (power ...
The charge signals at the input of a charge amplifier can be as low as some fC (FemtoCoulomb = 10 −15 C). A parasitic effect of common coaxial sensor cables is a charge shift when the cable is bent. Even slight cable motion may produce considerable charge signals which cannot be distinguished from the sensor signal.
Charger Bar's racing record was forty-three starts in six years. She won twenty-eight of her races, and placed second in three and third in six. She earned a total of $495,437.00 in purse money. [1] Charger Bar beat Kaweah Bar three times in her racing career. [3] She was undefeated in 1971, and was named World Champion Quarter Running Horse. [4]
A food scientist, nutritionist, and weight loss doctor weigh in on the viral new David protein bars and share if they can really help you lose fat and gain muscle.
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
Grisette by Side Project Brewery (4% ABV) "Side Project's Grisette is my go-to, after-shift beer — the true champagne of beers,” says Alex Brosseau, tasting room manager at Side Project ...