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2. DDR4 SDRAM - Wikipedia

   en.wikipedia.org/wiki/DDR4_SDRAM

   DDR4 SDRAM was released to the public market in Q2 2014, focusing on ECC memory, [6] while the non-ECC DDR4 modules became available in Q3 2014, accompanying the launch of Haswell-E processors that require DDR4 memory.

3. Synchronous dynamic random-access memory - Wikipedia

   en.wikipedia.org/wiki/Synchronous_dynamic_random...

   DDR SDRAM (sometimes called DDR1 for greater clarity) doubles the minimum read or write unit; every access refers to at least two consecutive words. Typical DDR SDRAM clock rates are 133, 166 and 200 MHz (7.5, 6, and 5 ns/cycle), generally described as DDR-266, DDR-333 and DDR-400 (3.75, 3, and 2.5 ns per beat).

4. DDR SDRAM - Wikipedia

   en.wikipedia.org/wiki/DDR_SDRAM

   The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed

5. Dynamic random-access memory - Wikipedia

   en.wikipedia.org/wiki/Dynamic_random-access_memory

   Double data rate SDRAM (DDR SDRAM or DDR) was a later development of SDRAM, used in PC memory beginning in 2000. Subsequent versions are numbered sequentially (DDR2, DDR3, etc.). DDR SDRAM internally performs double-width accesses at the clock rate, and uses a double data rate interface to transfer one half on each clock edge. DDR2 and DDR3 ...

6. Double data rate - Wikipedia

   en.wikipedia.org/wiki/Double_data_rate

   DDR SDRAM popularized the technique of referring to the bus bandwidth in megabytes per second, the product of the transfer rate and the bus width in bytes. DDR SDRAM operating with a 100 MHz clock is called DDR-200 (after its 200 MT/s data transfer rate), and a 64-bit (8-byte) wide DIMM operated at that data rate is called PC-1600, after its ...

7. Memory timings - Wikipedia

   en.wikipedia.org/wiki/Memory_timings

   Definition CAS latency: CL: The number of cycles between sending a column address to the memory and the beginning of the data in response. This is the number of cycles it takes to read the first bit of memory from a DRAM with the correct row already open.