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  2. Wide-bandgap semiconductor - Wikipedia

    en.wikipedia.org/wiki/Wide-bandgap_semiconductor

    Wide-bandgap semiconductors (also known as WBG semiconductors or WBGSs) are semiconductor materials which have a larger band gap than conventional semiconductors. Conventional semiconductors like silicon and selenium have a bandgap in the range of 0.7 – 1.5 electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range above 2 eV.

  3. List of semiconductor materials - Wikipedia

    en.wikipedia.org/wiki/List_of_semiconductor...

    A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).

  4. Direct and indirect band gaps - Wikipedia

    en.wikipedia.org/wiki/Direct_and_indirect_band_gaps

    In semiconductors, the band gap of a semiconductor can be of two basic types, a direct band gap or an indirect band gap. The minimal-energy state in the conduction band and the maximal-energy state in the valence band are each characterized by a certain crystal momentum (k-vector) in the Brillouin zone. If the k-vectors are different, the ...

  5. Wideband materials - Wikipedia

    en.wikipedia.org/wiki/Wideband_materials

    Examples of such material include gallium nitride (GaN) and silicon carbide (SiC). SiC has been used extensively in the creation of lasers for several years. However, it performs poorly (providing limited brightness) because it has an indirect band gap .

  6. Gallium nitride - Wikipedia

    en.wikipedia.org/wiki/Gallium_nitride

    Gallium nitride (Ga N) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, [9] [10] [11] high-power

  7. RTX's Raytheon Secures DARPA Contract To Develop Ultra-Wide ...

    www.aol.com/rtxs-raytheon-secures-darpa-contract...

    On Wednesday, RTX Corporation (NYSE:RTX) said Raytheon has secured a three-year, two-phase contract from DARPA to develop foundational ultra-wide bandgap semiconductors. These will be based on ...

  8. Electronic band structure - Wikipedia

    en.wikipedia.org/wiki/Electronic_band_structure

    In a semiconductor or band insulator, the Fermi level is surrounded by a band gap, referred to as the band gap (to distinguish it from the other band gaps in the band structure). The closest band above the band gap is called the conduction band, and the closest band beneath the band gap is called the valence band.

  9. Band gap - Wikipedia

    en.wikipedia.org/wiki/Band_gap

    The band-gap energy of semiconductors tends to decrease with increasing temperature. When temperature increases, the amplitude of atomic vibrations increase, leading to larger interatomic spacing. The interaction between the lattice phonons and the free electrons and holes will also affect the band gap to a smaller extent. [8]

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