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A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current -controlling device. The name "silicon controlled rectifier" is General Electric 's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell ...
In particular, if the pulse width of the gate current is sufficiently large (generally some tens of microseconds), the TRIAC has completed the triggering process when the gate signal is discontinued and the latching current reaches a minimum level called holding current. Holding current is the minimum required current flowing between the two ...
The thyristor is a four-layered, three-terminal semiconductor device, with each layer consisting of alternating N-type or P-type material, for example P-N-P-N. The main terminals, labelled anode and cathode, are across all four layers. The control terminal, called the gate, is attached to p-type material near the cathode.
In electronics, a latch-up is a type of short circuit which can occur in an integrated circuit (IC). More specifically, it is the inadvertent creation of a low-impedance path between the power supply rails of a MOSFET circuit, triggering a parasitic structure which disrupts proper functioning of the part, possibly even leading to its destruction due to overcurrent.
Solid-state relay. A solid state relay (SSR) is an electronic switching device that switches on or off when an external voltage (AC or DC) is applied across its control terminals. They serve the same function as an electromechanical relay, but solid-state electronics contain no moving parts and have a longer operational lifetime.
Zero-crossing control. Zero-crossing control (or burst-fire control) is an approach for electrical control circuits that starts operation with the AC load voltage at close to 0 volts in the AC cycle. [1] This is in relation to solid-state relays, such as TRIACs and silicon controlled rectifiers. [1] The purpose of the circuit is to start the ...
anode, gate, cathode. Electronic symbol. A gate turn-off thyristor (GTO) is a special type of thyristor, which is a high-power (e.g. 1200 V AC) semiconductor device. It was invented by General Electric. [1] GTOs, as opposed to normal thyristors, are fully controllable switches which can be turned on and off by their gate lead.
Contents. Power semiconductor device. A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics (for example in a switch-mode power supply). Such a device is also called a power device or, when used in an integrated circuit, a power IC. A power semiconductor device is usually used in "commutation ...