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In physics, an absorption edge (also known as an absorption discontinuity or absorption limit) is a sharp discontinuity in the absorption spectrum of a substance. These discontinuities occur at wavelengths where the energy of an absorbed photon corresponds to an electronic transition or ionization potential .
The optical band gap (see below) determines what portion of the solar spectrum a photovoltaic cell absorbs. [18] Strictly, a semiconductor will not absorb photons of energy less than the band gap; whereas most of the photons with energies exceeding the band gap will generate heat. Neither of them contribute to the efficiency of a solar cell.
The exact reverse of radiative recombination is light absorption. For the same reason as above, light with a photon energy close to the band gap can penetrate much farther before being absorbed in an indirect band gap material than a direct band gap one (at least insofar as the light absorption is due to exciting electrons across the band gap).
Typically, a Tauc plot shows the photon energy E (= hν) on the abscissa (x-coordinate) and the quantity (αE) 1/2 on the ordinate (y-coordinate), where α is the absorption coefficient of the material. Thus, extrapolating this linear region to the abscissa yields the energy of the optical bandgap of the amorphous material.
In a semiconductor or band insulator, the Fermi level is surrounded by a band gap, referred to as the band gap (to distinguish it from the other band gaps in the band structure). The closest band above the band gap is called the conduction band, and the closest band beneath the band gap is called the valence band.
In 1953, the Austrian-American physicist Franz Urbach (1902–1969) [1] found that such tails decay exponentially into the gap. [2] Later, photoemission experiments delivered absorption models revealing temperature dependence of the tail. [3] A variety of amorphous crystalline solids expose exponential band edges via optical absorption.
The Urbach Energy, or Urbach Edge, is a parameter typically denoted , with dimensions of energy, used to quantify energetic disorder in the band edges of a semiconductor. It is evaluated by fitting the absorption coefficient as a function of energy to an exponential function.
The Elliott formula describes analytically, or with few adjustable parameters such as the dephasing constant, the light absorption or emission spectra of solids. It was originally derived by Roger James Elliott to describe linear absorption based on properties of a single electron–hole pair. [ 1 ]