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A CPU cache is a piece of hardware that reduces access time to data in memory by keeping some part of the frequently used data of the main memory in a 'cache' of smaller and faster memory. The performance of a computer system depends on the performance of all individual units—which include execution units like integer, branch and floating ...
The minimum number of clock cycles required between opening a row of memory and accessing columns within it. The time to read the first bit of memory from a DRAM without an active row is T RCD + CL. Row Precharge Time T RP: The minimum number of clock cycles required between issuing the precharge command and opening the next row.
The memory cells are laid out in rectangular arrays on the surface of the chip. The 1-bit memory cells are grouped in small units called words which are accessed together as a single memory address. Memory is manufactured in word length that is usually a power of two, typically N=1, 2, 4 or 8 bits.
Computer memory stores information, such as data and programs, for immediate use in the computer. [2] The term memory is often synonymous with the terms RAM , main memory , or primary storage . Archaic synonyms for main memory include core (for magnetic core memory) and store .
The capacitor holds a high or low charge (1 or 0, respectively), and the transistor acts as a switch that lets the control circuitry on the chip read the capacitor's state of charge or change it. As this form of memory is less expensive to produce than static RAM, it is the predominant form of computer memory used in modern computers.
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 ( high voltage level) and reset to store a logic 0 (low voltage level).
Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating-gate MOSFETs. They differ at the circuit level depending on ...
He filed a patent in 1967, and was granted U.S. patent number 3,387,286 in 1968. [13] MOS memory offered higher performance, was cheaper, and consumed less power, than magnetic-core memory. [14] The patent describes the invention: "Each cell is formed, in one embodiment, using a single field-effect transistor and a single capacitor." [15]