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The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process.
A typical goal when using a semi-volatile memory is to provide the high performance and durability associated with volatile memories while providing some benefits of non-volatile memory. For example, some non-volatile memory types experience wear when written. A worn cell has increased volatility but otherwise continues to work. Data locations ...
One of the two plates is a permanent magnet set to a particular polarity; the other plate's magnetization can be changed to match that of an external field to store memory. This configuration is known as a magnetic tunnel junction (MTJ) and is the simplest structure for an MRAM bit. A memory device is built from a grid of such "cells".
Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
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Q & A is a novel written by Indian diplomat Vikas Swarup and published in 2005. The novel is also Swarup's first novel work. [1] It tells the rags to riches story of Ram Mohammad Thomas, a young waiter who becomes the biggest quiz show winner in history, only to be arrested and jailed on accusations that he cheated.
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