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Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors (also called "reactants"). These precursors react with the surface of a material one at a time in a ...
Aluminium oxide (or aluminium(III) oxide) is a chemical compound of aluminium and oxygen with the chemical formula Al 2 O 3. It is the most commonly occurring of several aluminium oxides, and specifically identified as aluminium oxide. It is commonly called alumina and may also be called aloxide, aloxite, or alundum in various forms and ...
Anodic aluminum oxide, anodic aluminum oxide (AAO), or anodic alumina is a self-organized form of aluminum oxide that has a honeycomb-like structure formed by high density arrays of uniform and parallel pores. The diameter of the pores can be as low as 5 nanometers and as high as several hundred nanometers, and length can be controlled from few ...
Physical vapor deposition (PVD), sometimes called physical vapor transport (PVT), describes a variety of vacuum deposition methods which can be used to produce thin films and coatings on substrates including metals, ceramics, glass, and polymers. PVD is characterized by a process in which the material transitions from a condensed phase to a ...
The phenomenon was first adapted to a process of vacuum deposition by Pohl and Pringsheim in 1912. However, it found little use until the 1930s, when people began experimenting with ways to make aluminum-coated mirrors for use in telescopes. Aluminum was far too reactive to be used in chemical wet deposition or electroplating methods.
Aluminium oxides or aluminum oxides are a group of inorganic compounds with formulas including aluminium (Al) and oxygen (O). Aluminium(I) oxide ( Al 2 O ) Aluminium(II) oxide ( AlO ) (aluminium monoxide)
Sputter deposition is a physical vapor deposition (PVD) method of thin film deposition by the phenomenon of sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. [1] [2]
The Hall–Héroult process is the major industrial process for smelting aluminium.It involves dissolving aluminium oxide (alumina) (obtained most often from bauxite, aluminium's chief ore, through the Bayer process) in molten cryolite and electrolyzing the molten salt bath, typically in a purpose-built cell.