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Ion sources are fundamental to ion milling. Their design and operation are crucial to producing accurate results. The most commonly used ion source relies on radiofrequency (RF) ion sources and direct current (DC) electric fields to generate and accelerate ions from a gas, typically a noble gas like argon or xenon.
Focused ion beam, also known as FIB, is a technique used particularly in the semiconductor industry, materials science and increasingly in the biological field for site-specific analysis, deposition, and ablation of materials. A FIB setup is a scientific instrument that resembles a scanning electron microscope (SEM).
An ion beam is a beam of ions, a type of charged particle beam. Ion beams have many uses in electronics manufacturing (principally ion implantation) and other industries. There are many ion beam sources, some derived from the mercury vapor thrusters developed by NASA in the 1960s. The most widely used ion beams are of singly-charged ions.
Ion beam analysis (IBA) is an important family of modern analytical techniques involving the use of MeV ion beams to probe the composition and obtain elemental depth profiles in the near-surface layer of solids. IBA is not restricted to MeV energy ranges.
Ion implantation setup with mass separator. Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy or using radiofrequency, and a target chamber, where the ions impinge on a target, which is the material to be implanted.
The ion current density is controlled by the ion source, the energy spread is determined primarily by the extraction grid, and the resolution is determined primarily by the optical column. The ion gun is an important component in surface science in that it provides the scientist with a means to sputter etch a surface and generate an elemental ...
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