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A translinear circuit is a circuit that carries out its function using the translinear principle. These are current-mode circuits that can be made using transistors that obey an exponential current-voltage characteristic—this includes bipolar junction transistors (BJTs) and CMOS transistors in weak inversion.
Transistor–transistor logic uses bipolar transistors to form its integrated circuits. [12] TTL has changed significantly over the years, with newer versions replacing the older types. Since the transistors of a standard TTL gate are saturated switches, minority carrier storage time in each junction limits the switching speed of the device.
CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]
In high performance CMOS (complementary metal–oxide–semiconductor) amplifier circuits, transistors are not only used to amplify the signal but are also used as active loads to achieve higher gain and output swing in comparison with resistive loads. [1] [2] [3] CMOS technology was introduced primarily for digital circuit design.
Alternatively, inverters can be constructed using two complementary transistors in a CMOS configuration. This configuration greatly reduces power consumption since one of the transistors is always off in both logic states. [5] Processing speed can also be improved due to the relatively low resistance compared to the NMOS-only or PMOS-only type ...
In a given technology node, such as the 90-nm CMOS process, the threshold voltage depends on the choice of oxide and on oxide thickness. Using the body formulas above, V T N {\displaystyle V_{TN}} is directly proportional to γ {\displaystyle \gamma } , and t O X {\displaystyle t_{OX}} , which is the parameter for oxide thickness.
Transistor V 3 turns "off" and it does not impact on the output. In the middle of the transition, the resistor R 3 limits the current flowing directly through the series connected transistor V 3, diode V 5 and transistor V 4 that are all conducting. It also limits the output current in the case of output logical "1" and short connection to the ...
The dynamic (switching) power consumption of CMOS circuits is proportional to frequency. [8] Historically, the transistor power reduction afforded by Dennard scaling allowed manufacturers to drastically raise clock frequencies from one generation to the next without significantly increasing overall circuit power consumption.