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Adhesive bonding with organic materials such as BCB or SU-8 has simple process properties and the ability to form high-aspect ratio micro structures. The bonding procedure is based on polymerization reaction of organic molecules to form long polymer chains during annealing. This cross-link reaction forms BCB and SU-8 to a solid polymer layer. [3]
The decrease of temperature is based on the increase of bonding strength using plasma activation on clean wafer surfaces. Further, the increase is caused by elevation in amount of Si-OH groups, removal of contaminants on the wafer surface, the enhancement of viscous flow of the surface layer and the enhanced diffusivity of water and gas trapped at the interface. [2]
Adhesive bonding is a joining technique used in the manufacture and repair of a wide range of products. Along with welding and soldering, adhesive bonding is one of the basic joining processes. In this technique, components are bonded together using adhesives. The broad range of types of adhesives available allows numerous materials to be ...
For bonding, the amount of thermal energy required is higher due to the need to first flow the adhesive and allow the two sides to come together into electrical contact, and then to cure the adhesive and create a lasting reliable bond. The temperatures, times, and pressure required for these processes can vary as shown in the following table.
Wafer bond characterization refers to the process of evaluating the quality and strength of a bond between two semiconductor wafers. The wafer bond characterization is based on different methods and tests. Considered a high importance of the wafer are the successful bonded wafers without flaws.
Wafer bonding is a packaging technology on wafer-level for the fabrication of microelectromechanical systems (MEMS), nanoelectromechanical systems (NEMS), microelectronics and optoelectronics, ensuring a mechanically stable and hermetically sealed encapsulation. The wafers' diameter range from 100 mm to 200 mm (4 inch to 8 inch) for MEMS/NEMS ...
The procedural steps of the direct bonding process of wafers any surface is divided into wafer preprocessing, pre-bonding at room temperature and; annealing at elevated temperatures. Even though direct bonding as a wafer bonding technique is able to process nearly all materials, silicon is the most established material up to now. Therefore, the ...
Surface activated bonding (SAB) is a non-high-temperature wafer bonding technology with atomically clean and activated surfaces. Surface activation prior to bonding by using fast atom bombardment is typically employed to clean the surfaces. High-strength bonding of semiconductors, metals, and dielectrics can be obtained even at room temperature ...