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CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]
When the battery fails, BIOS settings are reset to their defaults. The battery can also be used to power a real time clock (RTC) and the RTC, NVRAM and battery may be integrated into a single component. The name CMOS memory comes from the technology used to make the memory, which is easier to say than NVRAM. [3]
Non-volatile memory is typically used for the task of secondary storage or long-term persistent storage. The most widely used form of primary storage today [ as of? ] is a volatile form of random access memory (RAM), meaning that when the computer is shut down, anything contained in RAM is lost.
This makes NAND suitable for high-density data storage but less efficient for random access tasks. NAND flash is often employed in scenarios where cost-effective, high-capacity storage is crucial, such as in USB drives, memory cards, and solid-state drives . The primary differentiator lies in their use cases and internal structures.
CMOS memory was commercialized by RCA, which launched a 288-bit CMOS SRAM memory chip in 1968. [23] CMOS memory was initially slower than NMOS memory, which was more widely used by computers in the 1970s. [24] In 1978, Hitachi introduced the twin-well CMOS process, with its HM6147 (4 kb SRAM) memory chip, manufactured with a 3 μm process. The ...
Later the decreased cost of the CMOS technology allowed the same devices to be fabricated using it, adding the letter "C" to the device numbers (27xx(x) are n-MOS and 27Cxx(x) are CMOS). While parts of the same size from different manufacturers are compatible in read mode, different manufacturers added different and sometimes multiple ...
The advent of the metal–oxide–semiconductor field-effect transistor (MOSFET), invented at Bell Labs in 1959, [7] enabled the practical use of metal–oxide–semiconductor (MOS) transistors as memory cell storage elements in semiconductor memory, a function previously served by magnetic cores in computer memory. [8]
Semiconductor memory also has much faster access times than other types of data storage; a byte of data can be written to or read from semiconductor memory within a few nanoseconds, while access time for rotating storage such as hard disks is in the range of milliseconds.