Search results
Results from the WOW.Com Content Network
A thyristor (/ θaɪˈrɪstər /) is a solid-state semiconductor device which can be thought of as being a highly robust and switchable diode, allowing the passage of current in one direction but not the other, often under control of a gate electrode, that is used in high power applications like inverters and radar generators.
Power semiconductor device. Appearance. A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics (for example in a switch-mode power supply). Such a device is also called a power device or, when used in an integrated circuit, a power IC. A power semiconductor device is usually used in ...
NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]
TRIAC. For other uses, see Triac. A TRIAC (triode for alternating current; also bidirectional triode thyristor or bilateral triode thyristor[ 1 ]) is a three-terminal electronic component that conducts current in either direction when triggered. The term TRIAC is a genericised trademark. TRIACs are a subset of thyristors (analogous to a relay ...
Electronic symbol. The integrated gate-commutated thyristor (IGCT) is a power semiconductor electronic device, used for switching electric current in industrial equipment. It is related to the gate turn-off (GTO) thyristor. It was jointly developed by Mitsubishi and ABB. [1] Like the GTO thyristor, the IGCT is a fully controllable power switch ...
An HVDC converter converts electric power from high voltage alternating current (AC) to high-voltage direct current (HVDC), or vice versa. HVDC is used as an alternative to AC for transmitting electrical energy over long distances or between AC power systems of different frequencies. [ 1 ] HVDC converters capable of converting up to two ...
The tuned frequency is usually chosen to be in the range 150-250 Hz on 60 Hz systems or 120-210 Hz on 50 Hz systems. [4] It is an economic choice between the size of the TSC reactor (which increases with decreasing frequency) and the need to protect the thyristor valve from excessive oscillatory currents when the TSC is turned on at an ...
MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.