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A two-dimensional semiconductor (also known as 2D semiconductor) is a type of natural semiconductor with thicknesses on the atomic scale. Geim and Novoselov et al. initiated the field in 2004 when they reported a new semiconducting material graphene, a flat monolayer of carbon atoms arranged in a 2D honeycomb lattice. [1]
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
(a) Structure of a hexagonal TMD monolayer. M atoms are in black and X atoms are in yellow. (b) A hexagonal TMD monolayer seen from above. Transition-metal dichalcogenide (TMD or TMDC) monolayers are atomically thin semiconductors of the type MX 2, with M a transition-metal atom (Mo, W, etc.) and X a chalcogen atom (S, Se, or Te).
Semiconductor materials, which are used to fabricate the superlattice structures, may be divided by the element groups, IV, III-V and II-VI. While group III-V semiconductors (especially GaAs/Al x Ga 1−x As) have been extensively studied, group IV heterostructures such as the Si x Ge 1−x system are much more difficult to realize because of ...
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators.
Aside from being in practically every semiconductor device in use today, two dimensional systems allow access to interesting physics. The quantum Hall effect was first observed in a 2DEG, [9] which led to two Nobel Prizes in physics, of Klaus von Klitzing in 1985, [10] and of Robert B. Laughlin, Horst L. Störmer and Daniel C. Tsui in 1998. [11]
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
A common source of confusion with the Hall effect in such materials is that holes moving one way are really electrons moving the opposite way, so one expects the Hall voltage polarity to be the same as if electrons were the charge carriers as in most metals and n-type semiconductors. Yet we observe the opposite polarity of Hall voltage ...