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Metal-oxide varistor manufactured by Siemens & Halske AG. Modern varistor schematic symbol, which is the same as a thermistor symbol [1]. A varistor (a.k.a. voltage-dependent resistor (VDR)) is a surge protecting electronic component with an electrical resistance that varies with the applied voltage. [2]
Metal oxide varistors typically have lower resistance as they heat up; if connected directly across a power bus, for protection against voltage spikes, a varistor with a lowered trigger voltage can slide into catastrophic thermal runaway and sometimes a small explosion or fire. [23]
The strict physics definition treats passive components as ones that cannot supply energy themselves, whereas a battery would be seen as an active component since it truly acts as a source of energy. However, electronic engineers who perform circuit analysis use a more restrictive definition of passivity .
Although this standard is designed for testing equipment as a whole at system level, not for individual protection devices, in practice this surge waveform is often also used for rating Transient Voltage Suppressors (TVS), Gas Discharge Tubes (GDT), Metal Oxide Varistors (MOV), and other surge protection devices.
Metal oxide varistor, an electronic component with a significant non-ohmic current-voltage characteristic; Marconi-Osram Valve, a former British manufacturer of vacuum tubes; The Merchant of Venice, a play by William Shakespeare; MOV (TV channel), a Portuguese television channel operated by NOS
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PMOS uses p-channel (+) metal-oxide-semiconductor field effect transistors (MOSFETs) to implement logic gates and other digital circuits. PMOS transistors operate by creating an inversion layer in an n-type transistor body. This inversion layer, called the p-channel, can conduct holes between p-type "source" and "drain" terminals.
MOS stands for metal-oxide-semiconductor, reflecting the way MOS-transistors were originally constructed, predominantly before the 1970s, with gates of metal, typically aluminium. Since around 1970, however, most MOS circuits have used self-aligned gates made of polycrystalline silicon , a technology first developed by Federico Faggin at ...