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The following other wikis use this file: Usage on ar.wikipedia.org بوابة اقتران سالبة; Usage on en.wikibooks.org Practical Electronics/IC/4011
In 2013, Samsung introduced V-NAND (Vertical NAND, also known as 3D NAND) with triple-level cells, which had a memory capacity of 128 Gbit. [27] They expanded their TLC V-NAND technology to 256 Gbit memory in 2015, [24] and 512 Gbit in 2017. [28] Enterprise TLC (eTLC) is a more expensive variant of TLC that is optimized for commercial use.
2006-09-07 23:27 Jamesm76 294×587×0 (11827 bytes) SVG drawing of a CMOS NAND gate replacing the older PNG version I had previously uploaded ("CMOS NAND Layout.png"). I am the author and I release this to the public domain.
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A very early CD4029A counter IC, in 16-pin ceramic dual in-line package (DIP-16), manufactured by RCA Colorized IC die and schematics of CD4011BE NAND gate. The 4000 series was introduced as the CD4000 COS/MOS series in 1968 by RCA [1] as a lower power and more versatile alternative to the 7400 series of transistor-transistor logic (TTL) chips.
There are several methods for 3D IC design, including recrystallization and wafer bonding methods. There are two major types of wafer bonding, Cu-Cu connections (copper-to-copper connections between stacked ICs, used in TSVs) [18] [19] and through-silicon via (TSV). 3D ICs with TSVs may use solder microbumps, small solder balls as an interface between two individual dies in a 3D IC. [20]
The following is a list of CMOS 4000-series digital logic integrated circuits.In 1968, the original 4000-series was introduced by RCA.Although more recent parts are considerably faster, the 4000 devices operate over a wide power supply range (3V to 18V recommended range for "B" series) and are well suited to unregulated battery powered applications and interfacing with sensitive analogue ...
In semiconductor design, standard-cell methodology is a method of designing application-specific integrated circuits (ASICs) with mostly digital-logic features. Standard-cell methodology is an example of design abstraction, whereby a low-level very-large-scale integration layout is encapsulated into an abstract logic representation (such as a NAND gate).