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Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors (also called "reactants").
Aluminium oxide (or aluminium(III) oxide) is a chemical compound of aluminium and oxygen with the chemical formula Al 2 O 3. It is the most commonly occurring of several aluminium oxides, and specifically identified as aluminium oxide. It is commonly called alumina and may also be called aloxide, aloxite, or alundum in various forms and ...
The Hall–Héroult process is the major industrial process for smelting aluminium. It involves dissolving aluminium oxide (alumina) (obtained most often from bauxite , aluminium 's chief ore, through the Bayer process ) in molten cryolite and electrolyzing the molten salt bath, typically in a purpose-built cell.
Molten cryolite is used as a solvent for aluminium oxide (Al 2 O 3) in the Hall–Héroult process, used in the refining of aluminium. It decreases the melting point of aluminium oxide from 2000–2500 °C to 900–1000 °C, and increases its conductivity [ 18 ] thus making the extraction of aluminium more economical.
Primary aluminium smelting is the process of extracting aluminium from aluminium oxide (also known as alumina). The process takes place in electrolytic cells that are known as pots. The pots are made up of steel shells with two linings, an outer insulating or refractory lining and an inner carbon lining that acts as the cathode of the ...
This process can be used to grow thick (tens or hundreds of micrometers), largely crystalline, oxide coatings on metals such as aluminium, magnesium [2] and titanium. Because they can present high hardness [ 3 ] and a continuous barrier, these coatings can offer protection against wear , corrosion or heat as well as electrical insulation .
Prior to preparation the oxide on the silicon surface acts as a diffusion barrier; the eutectic metal bond must be formed against clean silicon. [6] [12] To remove existing native oxide layers wet chemical etching (HF clean), dry chemical etching or chemical vapor deposition (CVD) with different types of crystals can be used.
Anodic aluminum oxide, anodic aluminum oxide (AAO), or anodic alumina is a self-organized form of aluminum oxide that has a honeycomb-like structure formed by high density arrays of uniform and parallel pores. The diameter of the pores can be as low as 5 nanometers and as high as several hundred nanometers, and length can be controlled from few ...