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  2. Plasma etching - Wikipedia

    en.wikipedia.org/wiki/Plasma_etching

    Plasma etching. Plasma etching is a form of plasma processing used to fabricate integrated circuits. It involves a high-speed stream of glow discharge (plasma) of an appropriate gas mixture being shot (in pulses) at a sample. The plasma source, known as etch species, can be either charged (ions) or neutral (atoms and radicals).

  3. Etching (microfabrication) - Wikipedia

    en.wikipedia.org/wiki/Etching_(microfabrication)

    Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module in fabrication, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which ...

  4. Chemical milling - Wikipedia

    en.wikipedia.org/wiki/Chemical_milling

    A high-purity (≥99.9998%) aluminium bar that has been etched to reveal the component crystallites. Chemical milling or industrial etching is the subtractive manufacturing process of using baths of temperature-regulated etching chemicals to remove material to create an object with the desired shape. [1][2] Other names for chemical etching ...

  5. Reactive-ion etching - Wikipedia

    en.wikipedia.org/wiki/Reactive-ion_etching

    A reactive-ion etching setup in a laboratory cleanroom. Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum ...

  6. Etching - Wikipedia

    en.wikipedia.org/wiki/Etching

    The plate is then completely submerged in a solution that eats away at the exposed metal. ferric chloride may be used for etching copper or zinc plates, whereas nitric acid may be used for etching zinc or steel plates. Typical solutions are 1 part FeCl 3 to 1 part water and 1 part nitric to 3 parts water. The strength of the acid determines the ...

  7. Metal assisted chemical etching - Wikipedia

    en.wikipedia.org/.../Metal_assisted_chemical_etching

    Metal Assisted Chemical Etching (also known as MACE) is the process of wet chemical etching of semiconductors (mainly silicon) with the use of a metal catalyst, usually deposited on the surface of a semiconductor in the form of a thin film or nanoparticles. The semiconductor, covered with the metal is then immersed in an etching solution ...

  8. Deep reactive-ion etching - Wikipedia

    en.wikipedia.org/wiki/Deep_reactive-ion_etching

    Deep reactive-ion etching. Deep reactive-ion etching (DRIE) is a special subclass of reactive-ion etching (RIE). It enables highly anisotropic etch process used to create deep penetration, steep-sided holes and trenches in wafers /substrates, typically with high aspect ratios. It was developed for microelectromechanical systems (MEMS), which ...

  9. Langmuir–Blodgett trough - Wikipedia

    en.wikipedia.org/wiki/Langmuir–Blodgett_trough

    Clean room enclosure. A Langmuir–Blodgett trough (LB trough) is an item of laboratory apparatus that is used to compress monolayers of molecules on the surface of a given subphase (usually water) and to measure surface phenomena due to this compression. It can also be used to deposit single or multiple monolayers on a solid substrate.