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  2. Drain-induced barrier lowering - Wikipedia

    en.wikipedia.org/wiki/Drain-induced_barrier_lowering

    As drain voltage is increased, the depletion region of the p-n junction between the drain and body increases in size and extends under the gate, so the drain assumes a greater portion of the burden of balancing depletion region charge, leaving a smaller burden for the gate. As a result, the charge present on the gate retains charge balance by ...

  3. Field-effect transistor - Wikipedia

    en.wikipedia.org/wiki/Field-effect_transistor

    The device consists of an active channel through which charge carriers, electrons or holes, flow from the source to the drain. Source and drain terminal conductors are connected to the semiconductor through ohmic contacts. The conductivity of the channel is a function of the potential applied across the gate and source terminals.

  4. Antistatic device - Wikipedia

    en.wikipedia.org/wiki/Antistatic_device

    An ionizing bar, sometimes referred to as a static bar, is a type of industrial equipment used for removing static electricity from a production line to dissipate static cling and other such phenomena that would disrupt the line. It is important in the manufacturing and printing industries, although it can be used in other applications as well.

  5. Contact resistance - Wikipedia

    en.wikipedia.org/wiki/Contact_resistance

    where and are contact and channel resistances, respectively, / is the channel length/width, is gate insulator capacitance (per unit of area), is carrier mobility, and and are gate-source and drain-source voltages. Therefore, the linear extrapolation of total resistance to the zero channel length provides the contact resistance.

  6. Power MOSFET - Wikipedia

    en.wikipedia.org/wiki/Power_MOSFET

    NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]

  7. Erie's $50 million lead pipe replacement plan: where does it ...

    www.aol.com/eries-50-million-lead-pipe-093251288...

    Erie Water Works has a lot going on underneath the city’s streets as part of a $50 million, multi-year plan to update aging infrastructure and ensure water quality.. The region’s largest water ...

  8. Common drain - Wikipedia

    en.wikipedia.org/wiki/Common_drain

    In electronics, a common-drain amplifier, also known as a source follower, is one of three basic single-stage field-effect transistor (FET) amplifier topologies, typically used as a voltage buffer. In this circuit (NMOS) the gate terminal of the transistor serves as the signal input, the source is the output, and the drain is common to both ...

  9. Common source - Wikipedia

    en.wikipedia.org/wiki/Common_source

    The easiest way to tell if a FET is common source, common drain, or common gate is to examine where the signal enters and leaves. The remaining terminal is what is known as "common". In this example, the signal enters the gate, and exits the drain. The only terminal remaining is the source. This is a common-source FET circuit.

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