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The electron mobility is defined by the equation: =. where: E is the magnitude of the electric field applied to a material,; v d is the magnitude of the electron drift velocity (in other words, the electron drift speed) caused by the electric field, and
In semiconductor lasers, the carrier lifetime is the time it takes an electron before recombining via non-radiative processes in the laser cavity. In the frame of the rate equations model , carrier lifetime is used in the charge conservation equation as the time constant of the exponential decay of carriers.
The current impediment to large-scale IGZO manufacturing is the synthesis method. The most widely used technique for transparent conducting oxide (TCO) synthesis is pulsed laser deposition (PLD). [12] In PLD, a laser is used to focus on nano-sized spots on solid elemental targets. Laser pulse frequencies are varied between the targets in ratios ...
Semiconductor characterization techniques are used to characterize a semiconductor material or device (p–n junction, Schottky diode, solar cell, etc.).Some examples of semiconductor properties that could be characterized include the depletion width, carrier concentration, carrier generation and recombination rates, carrier lifetimes, defect concentration, and trap states.
In a semiconductor with a single carrier type, the magnetoresistance is proportional to (1 + (μB) 2), where μ is the semiconductor mobility (units m 2 ·V −1 ·s −1, equivalently m 2 ·Wb −1, or T −1) and B is the magnetic field (units teslas).
The occupancy of the energy bands in a semiconductor is set by the position of the Fermi level relative to the semiconductor energy-band edges. Application of a source-to-substrate reverse bias of the source-body pn-junction introduces a split between the Fermi levels for electrons and holes, moving the Fermi level for the channel further from ...
In this case, the carrier density (in this context, also called the free electron density) can be estimated by: [5] n = N A Z ρ m m a {\displaystyle n={\frac {N_{\text{A}}Z\rho _{m}}{m_{a}}}} Where N A {\displaystyle N_{\text{A}}} is the Avogadro constant , Z is the number of valence electrons , ρ m {\displaystyle \rho _{m}} is the density of ...
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.