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The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. [1] [2] It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3904 NPN transistor. [3]
A schematic diagram of the Ebers-Moll models of a PNP BJT. The base, collector and emitter currents are I B, I C and I E, the common-base forward and reverse current gains are α F and α R, and the collector and emitter diode currents are I CD and I ED. Date: 4 August 2010, 05:26 (UTC) Source: Ebers-Moll_Model_PNP.PNG; Author
In a diode model two diodes are connected back-to-back to make a PNP or NPN bipolar junction transistor (BJT) equivalent. This model is theoretical and qualitative. This model is theoretical and qualitative.
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The NPN BJT (n-type bipolar junction transistor) and nMOS (n-type metal oxide semiconductor field effect transistor) have greater conductance than their PNP and pMOS relatives, so may be more commonly used for these outputs. Open outputs using PNP and pMOS transistors will use the opposite internal voltage rail used by NPN and nMOS transistors.
An IGBT cell is constructed similarly to an n-channel vertical-construction power MOSFET, except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor. This additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel MOSFET. The whole ...
The circuit can be explained by viewing the transistor as being under the control of negative feedback. From this viewpoint, a common-collector stage (Fig. 1) is an amplifier with full series negative feedback. In this configuration (Fig. 2 with β = 1), the entire output voltage V out is placed contrary and in series with the input voltage V in.
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