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The junction version known as the bipolar junction transistor (BJT), invented by Shockley in 1948, [12] was for three decades the device of choice in the design of discrete and integrated circuits. Nowadays, the use of the BJT has declined in favor of CMOS technology in the design of digital integrated circuits.
The junction version known as the bipolar junction transistor (BJT), invented by Shockley in 1948. [10] Later the similar thyristor was proposed by William Shockley in 1950 and developed in 1956 by power engineers at General Electric (GE). The metal–oxide–semiconductor field-effect transistor (MOSFET) was also invented at Bell Labs.
A bipolar junction transistor (BJT) has terminals labeled base, collector and emitter. A small current at the base terminal, flowing between the base and the emitter, can control or switch a much larger current between the collector and emitter. A field-effect transistor (FET) has terminals labeled gate, source and drain. A voltage at the gate ...
Unlike BJT technology, this allows a high doping density to be used in the base, reducing the base resistance while maintaining gain. The efficiency of the heterojunction is measured by the Kroemer factor. [3] Kroemer was awarded a Nobel Prize in 2000 for his work in this field at the University of California, Santa Barbara.
The construction of the 2N3904 and 2N3906 in the 1960s represented a significant performance and cost improvement, with the plastic TO-92 case replacing metal cans. This transistor is a low-cost device, widely available and sufficiently robust to be of use by experimenters and electronics hobbyists. [4]
At low frequencies and under small-signal conditions, the circuit in Figure 1 can be represented by that in Figure 2, where the hybrid-pi model for the BJT has been employed. The input signal is represented by a Thévenin voltage source v s with a series resistance R s and the load is a resistor R L. This circuit can be used to derive the ...
The common base current gain (or α) of a point-contact transistor is usually around 2 to 3, [4] whereas α of bipolar junction transistor (BJT) cannot exceed 1. The common emitter current gain (or β) of a point-contact transistor does not usually exceed 1, [4] whereas β of a BJT is typically between 20 and 200. Negative differential ...
Motorola ECL 10,000 basic gate circuit diagram from 1972. [1] Note the Q5 and Q6 emitters coupled to the output. In electronics, emitter-coupled logic (ECL) is a high-speed integrated circuit bipolar transistor logic family.