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The other type of packaging used in the 1970s, called the ICP (Integrated Circuit Package), was a ceramic package (sometimes round as the transistor package), with the leads on one side, co-axially with the package axis. Commercial circuit packaging quickly moved to the dual in-line package (DIP), first in ceramic and later in plastic. [5]
A standard-sized 8-pin dual in-line package (DIP) containing a 555 IC.. Integrated circuits and certain other electronic components are put into protective packages to allow easy handling and assembly onto printed circuit boards and to protect the devices from damage.
Micromachining, semiconductor processing, microelectronic fabrication, semiconductor fabrication, MEMS fabrication and integrated circuit technology are terms used instead of microfabrication, but microfabrication is the broad general term.
Electronic packaging is the design and production of enclosures for electronic devices ranging from individual semiconductor devices up to complete systems such as a mainframe computer. Packaging of an electronic system must consider protection from mechanical damage, cooling, radio frequency noise emission and electrostatic discharge .
The primary application of monocrystalline silicon is in the production of discrete components and integrated circuits.Ingots made by the Czochralski method are sliced into wafers about 0.75 mm thick and polished to obtain a regular, flat substrate, onto which microelectronic devices are built through various microfabrication processes, such as doping or ion implantation, etching, deposition ...
Packaging engineering, also package engineering, packaging technology and packaging science, is a broad topic ranging from design conceptualization to product placement. All steps along the manufacturing process, and more, must be taken into account in the design of the package for any given product.
A semiconductor package is a metal, plastic, glass, or ceramic casing containing one or more discrete semiconductor devices or integrated circuits.Individual components are fabricated on semiconductor wafers (commonly silicon) before being diced into die, tested, and packaged.
12 nm: Tsuneo Mano, J. Yamada, Junichi Inoue, S. Nakajima Nippon Telegraph and Telephone (NTT) [37] [42] September 1987: 500 nm: 12.5 nm: Hussein I. Hanafi, Robert H. Dennard, Yuan Taur, Nadim F. Haddad IBM T.J. Watson Research Center [43] December 1987: 250 nm? Naoki Kasai, Nobuhiro Endo, Hiroshi Kitajima NEC [44] February 1988: 400 nm 10 nm