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The effects of thin-film interference can also be seen in oil slicks and soap bubbles. The reflectance spectrum of a thin-film features distinct oscillations and the extrema of the spectrum can be used to calculate the thickness of the thin-film. [1] Ellipsometry is a technique that is often used to measure properties of thin films. In a ...
Thin-film optics is the branch of optics that deals with very thin structured layers of different materials. [1] In order to exhibit thin-film optics, the thickness of the layers of material must be similar to the coherence length ; for visible light it is most often observed between 200 and 1000 nm of thickness.
A. R. Forouhi and I. Bloomer deduced dispersion equations for the refractive index, n, and extinction coefficient, k, which were published in 1986 [1] and 1988. [2] The 1986 publication relates to amorphous materials, while the 1988 publication relates to crystalline.
The OPD can be calculated from the following equation: = where d 1 and d 2 are the distances of the ray passing through medium 1 or 2, n 1 is the greater refractive index (e.g., glass) and n 2 is the smaller refractive index (e.g., air).
Compared to traditional porosimeters, Ellipsometer porosimeters are well suited to very thin film pore size and pore size distribution measurement. Film porosity is a key factor in silicon based technology using low-κ materials, organic industry (encapsulated organic light-emitting diodes ) as well as in the coating industry using sol gel ...
A thin film is a layer of materials ranging from fractions of a nanometer to several micrometers in thickness. [1] The controlled synthesis of materials as thin films (a process referred to as deposition) is a fundamental step in many applications.
Thin-film thickness monitors, deposition rate controllers, and so on, are a family of instruments used in high and ultra-high vacuum systems. They can measure the thickness of a thin film, not only after it has been made, but while it is still being deposited, and some can control either the final thickness of the film, the rate at which it is deposited, or both.
Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors. [1] MBE is used to make diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such ...
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