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High Bandwidth Memory (HBM) is a computer memory interface for 3D-stacked synchronous dynamic random-access memory (SDRAM) initially from Samsung, AMD and SK Hynix.It is used in conjunction with high-performance graphics accelerators, network devices, high-performance datacenter AI ASICs, as on-package cache in CPUs [1] and on-package RAM in upcoming CPUs, and FPGAs and in some supercomputers ...
In electronic engineering, a through-silicon via (TSV) or through-chip via is a vertical electrical connection that passes completely through a silicon wafer or die. TSVs are high-performance interconnect techniques used as an alternative to wire-bond and flip chips to create 3D packages and 3D integrated circuits.
As of 2014, a number of memory products such as High Bandwidth Memory (HBM) and the Hybrid Memory Cube have been launched that implement 3D IC stacking with TSVs. There are a number of key stacking approaches being implemented and explored. These include die-to-die, die-to-wafer, and wafer-to-wafer. Die-to-Die
72-pin SO-DIMM. There are numerous DIMM variants, employing different pin-counts: DIMM. 100-pin: printer SDRAM and printer ROM (e.g., PostScript); 168-pin: SDR SDRAM sometimes used for FPM/EDO DRAM in workstations or servers, may be 3.3 or 5 V
ICHEON, South Korea (Reuters) -South Korea's SK Hynix said on Thursday that its high-bandwidth memory (HBM) chips used in AI chipsets were sold out for this year and almost sold out for 2025 as ...
A die, in the context of integrated circuits, is a small block of semiconducting material on which a given functional circuit is fabricated. Typically, integrated circuits are produced in large batches on a single wafer of electronic-grade silicon (EGS) or other semiconductor (such as GaAs ) through processes such as photolithography .
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